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1
2
TO -24 7
1 - Cathode 2 - Anode Back of Case - Cathode
1 2
APT100S20B
200V
120A
HIGH VOLTAGE SCHOTTKY DIODE
PRODUCT APPLICATIONS
* Parallel Diode * * * * *
-Switchmode Power Supply -Inverters Free Wheeling Diode -Motor Controllers -Converters Snubber Diode Uninterruptible Power Supply (UPS) 48 Volt Output Rectifiers High Speed Rectifiers
PRODUCT FEATURES
* Ultrafast Recovery Times * Soft Recovery Characteristics * Popular TO-247 Package or * Low Forward Voltage * High Blocking Voltage * Low Leakage Current
Surface Mount D3PAK Package
PRODUCT BENEFITS
* Low Losses * Low Noise Switching * Cooler Operation * Higher Reliability Systems * Increased System Power
Density
MAXIMUM RATINGS
Symbol VR VRRM VRWM IF(AV) IF(RMS) IFSM TJ,TSTG TL EVAL Characteristic / Test Conditions Maximum D.C. Reverse Voltage Maximum Peak Repetitive Reverse Voltage Maximum Working Peak Reverse Voltage Maximum Average Forward Current
1
All Ratings: TC = 25C unless otherwise specified.
APT100S20B UNIT
200
Volts
(TC = 125C, Duty Cycle = 0.5)
1
120 318 1000 -55 to 150 300 100
C mJ Amps
RMS Forward Current (Square wave, 50% duty)
Non-Repetitive Forward Surge Current (TJ = 45C, 8.3ms) Operating and StorageTemperature Range Lead Temperature for 10 Sec. Avalanche Energy (2A, 50mH)
STATIC ELECTRICAL CHARACTERISTICS
Symbol IF = 100A VF Forward Voltage IF = 200A IF = 100A, TJ = 125C IRM CT Maximum Reverse Leakage Current Junction Capacitance, VR = 200V
Microsemi Website - http://www.microsemi.com
MIN
TYP
MAX
UNIT
.89 1.06 .76
.95
Volts
VR = 200V VR = 200V, TJ = 125C
2 40 470
053-6021 Rev C
pF
5-2006
mA
DYNAMIC CHARACTERISTICS
Symbol trr Qrr IRRM trr Qrr IRRM trr Qrr IRRM Characteristic Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current IF = 100A, diF/dt = -700A/s VR = 133V, TC = 125C IF = 100A, diF/dt = -200A/s VR = 133V, TC = 125C Test Conditions IF = 100A, diF/dt = -200A/s VR = 133V, TC = 25C MIN TYP
APT100S20B
MAX UNIT ns nC
70 230 6 110 690 11 95 1750 32 -
-
Amps ns nC Amps ns nC Amps
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol RJC WT Characteristic / Test Conditions Junction-to-Case Thermal Resistance Package Weight MIN TYP MAX UNIT C/W oz g
.18 0.22 5.9 10 1.1
lb*in N*m
Torque
Maximum Mounting Torque
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
1 Countinous current limited by package lead temperature.
0.20
, THERMAL IMPEDANCE (C/W)
0.18 0.16 0.14 0.12 0.10 0.08 0.06 0.04 0.02 0 10-5
D = 0.9
0.7 0.5 0.3
Note:
PDM t1 t2
0.1 0.05 10-4
Z
SINGLE PULSE
Peak TJ = PDM x ZJC + TC
Duty Factor D = t1/t2
JC
10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (seconds) FIGURE 1a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION
TJ ( C)
0.00817 0.0174 0.0593
TC ( C)
0.095
5-2006
Dissipated Power (Watts) 0.00514 0.00242 0.0158 0.384
053-6021 Rev C
ZEXT are the external thermal impedances: Case to sink, sink to ambient, etc. Set to zero when modeling only the case to junction.
FIGURE 1b, TRANSIENT THERMAL IMPEDANCE MODEL
ZEXT
TYPICAL PERFORMANCE CURVES
360 300
IF, FORWARD CURRENT (A) trr, REVERSE RECOVERY TIME (ns)
120 100 80 60 40 20 0
TJ = 125C VR = 133V
APT100S20B
100A 130A 50A
240 180 120 TJ = 125C 60 0 TJ = 150C TJ = -55C TJ = 25C
0
0.5 1.0 1.5 VF, ANODE-TO-CATHODE VOLTAGE (V) Figure 2. Forward Current vs. Forward Voltage
IRRM, REVERSE RECOVERY CURRENT (A)
TJ = 125C VR = 133V
0 200 400 600 800 -diF /dt, CURRENT RATE OF CHANGE(A/s) Figure 3. Reverse Recovery Time vs. Current Rate of Change 40 35 30 25 20 15 10 5 0 50A 100A
TJ = 125C VR = 133V
2500
Qrr, REVERSE RECOVERY CHARGE (nC)
2000 130A 100A
130A
1500
1000 50A 500
200 400 600 800 -diF /dt, CURRENT RATE OF CHANGE (A/s) Figure 4. Reverse Recovery Charge vs. Current Rate of Change 1.2 1.0 0.8 0.6 0.4 t rr I RRM
IF(AV) (A)
0
0
0 200 400 600 800 -diF /dt, CURRENT RATE OF CHANGE (A/s) Figure 5. Reverse Recovery Current vs. Current Rate of Change 400
Duty cycle = 0.5 TJ = 150C
Q rr t rr 300
Kf, DYNAMIC PARAMETERS (Normalized to 700A/s)
Qrr
200
Lead Temperature Limited
100 0.2 0.0 0
25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 6. Dynamic Parameters vs. Junction Temperature 6000 5000 4000 3000
0
75 100 125 150 Case Temperature (C) Figure 7. Maximum Average Forward Current vs. CaseTemperature
25
50
CJ, JUNCTION CAPACITANCE (pF)
10 100 200 VR, REVERSE VOLTAGE (V) Figure 8. Junction Capacitance vs. Reverse Voltage
0
1
053-6021 Rev C
1000
5-2006
2000
APT100S20B
Vr +18V 0V D.U.T. 30H
trr/Qrr Waveform
diF /dt Adjust
APT20M20LLL
PEARSON 2878 CURRENT TRANSFORMER
Figure 9. Diode Test Circuit
1 2 3 4
IF - Forward Conduction Current diF /dt - Rate of Diode Current Change Through Zero Crossing. IRRM - Maximum Reverse Recovery Current. Zero
1
4
5 3 2
trr - Reverse Recovery Time, measured from zero crossing where diode current goes from positive to negative, to the point at which the straight line through IRRM and 0.25 IRRM passes through zero. Qrr - Area Under the Curve Defined by IRRM and trr.
0.25 IRRM
5
Figure 10, Diode Reverse Recovery Waveform and Definitions
TO-247 Package Outline
4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 6.15 (.242) BSC 15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244)
Cathode
20.80 (.819) 21.46 (.845) 3.50 (.138) 3.81 (.150)
4.50 (.177) Max. 0.40 (.016) 0.79 (.031) 1.65 (.065) 2.13 (.084) 1.01 (.040) 1.40 (.055)
5-2006
19.81 (.780) 20.32 (.800)
053-6021 Rev C
Anode
2.21 (.087) 2.59 (.102)
Cathode
10.90 (.430) BSC
Dimensions in Millimeters and (Inches)
Microsemi's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.

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